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Below you’ll find all the accepted abstracts for poster for the conference. If there is no link for the abstract, the author does not approve of publishing.
1. SUPERLATTICE QW STRUCTURE RESONANT TUNNELLING DIODE FOR THZ APPLICATION
Michele Cito
2. HETEROEPITAXY of NLO TERNARY MATERIALS for FREQUENCY CONVERSION DEVICES
Vladimir Tassev
3. INVESTIGATION OF ULTRA-LOW CONTACT RESISTIVITY FOR InP BASED DHBTS
Hao Zhang
4. Characterisation of InGaAs/AlAs resonant-tunnelling diodes
Patrik Blomberg
5. DYNAMIC RON AND VTH DEGRADATION UNDER HIGH GATE AND DRAIN BIASES IN E-MODE ALGAN/GAN HEMT
Yue-Ming Hsin
6. CONTINUUM-SOURCE CAVITY-ENHANCED OPTICAL FLUX MONITORING TO CONTROL THIN LAYER DEPOSITION PROCESSES
Guillaume Saint-Girons
7. Transfer Printed AlGaN/GaN Membrane Photo-HEMT
Ramit Kumar Mondal
8. Interface properties of Ohmic contacts to n-GaAs
Johanna Laaksonen
9. EFFECTS OF ANNEALING AT 800 ℃ ON SiO2/GaN INTERFACES STUDIED BY X-RAY PHOTOELECTRON SPECTROSCOPY
Masamichi Akazawa
10. 1300 V low on-resistance GaN HEMTs on Si
Jen-Inn Chyi
11. HIGH Ge-DOPING FOR LOWER OHMIC CONTACT RESISTANCE IN GaN BASED HIGH ELECTRON MOBILITY TRANSISTORS
Radhakrishnan
12. Measuring the ensemble transition dipole moments of quantum dot films by time and angle resolved luminescence spectroscopy
Binita Tongbram
13. Analysis and Impact of Point Defects in Vertical GaN on GaN Diodes Grown by MOCVD
Soo-Young Moon
14. Low-Temperature Processing for GaN on GaN Schottky diodes and ohmic contacts
Adamantia Logotheti
15. AlGaN/GaN HEMTs With P-GaN Gate Extension
Mr. Krishna Sai Sriramadasu
16. New polarization interface charge model to calculate carrier concentration of GaN HEMTs
Tetsuya Suemitsu
17. First demonstration of metal-AlScN-β-Ga2O3 capacitor for ferroelectric-based memory application
Seungyoon Oh
18. GROWTH AND CHARACTERIZATION OF N-DOPED VO2 THIN FILMS ON QUARTZ SUBSTRATES BY THE MIST CVD
Taisei Kano
19. THE EFFECT OF O3 ASSISTANCE TO CORUNDUM STRUCTURED In2O3:Sn AND ITS STABILITY TO GAMMA-RAY EXPOSURE
Kazuki Shimazoe
20. Relation between Absorption Edge and Exciton Transition in Rocksalt-structured MgZnO Films
Ryosuke Nemoto
21. INTERFACE CHARACTERISATION OF PLASMA-TREATED INAS FOR RESISTIVE MEMORIES USING CAPACITANCE-VOLTAGE METHODS
André Andersen
22. Formation and transformation dynamics study of transition-metal phosphide by in-situ TEM for CO2 reduction reaction
Kshipra Sharma
23. NanoFrazor Technology - Enabling Unique Semiconductor Device Fabrication with 2D Materials
Fei Yang
24. Unveiling the Power of 2D Semiconductors: Revolutionizing Sub-5 nm Transistor Technology
Arely Cano
25. SELF-ALIGNED GATE FERROELECTRIC AlScN/GaN HEMT
Gyuhyung Lee
26. DLTS, admittance spectra and EBIC studies of NiO/Ga2O3 heterojunctions: comparison to Schottky diodes
Anastasiia Kochkova
27. Lithium incorporation in (111)NiO epitaxial layers grown by pulsed laser deposition technique
Bhabani Prasad Sahu
28. HIGH CONDUCTIVITY OF SI-DOPED Β-(ALXGA1-X)2O3 THIN FILMS VIA MIST CVD
Shoma Hosaka
29. Impacts of growth temperature on electrical properties of Mg-doped AlGaN films grown by RF-MBE under nitrogen-rich conditions
Kiri Shida
30. Deposition of phosphorus-incorporated layered carbon nitride films for electrical materials
Natsuko Kurimoto
31. GROWTH AND CHARACTERIZATION OF GALLIUM PHOSPHIDE ON GALLIUM OXIDE SUBSTRATE FOR HETEROJUNCTION DIODE
Sebastian Lourdudoss
32. THERMAL CONDUCTIVITY OF ScAlN: EFFECT OF LAYER THICKNESS
Dat Tran
33. Homo Epitaxial Growth of GaN and AlGaN Drift Layers on HVPE and Ammono GaN Substrates for High Power Vertical devices
Byeongchan So
34. Enhancement of UV luminescence yield by n-ZnO/i-NiO/p-GaN LEDs
Simran Arora
35. Quantum Oscillations of Excitonic Schrodinger’s Cats as Qubits Using Quantum Dot Based Resonant Tunneling Diodes
Shouvik Datta
36. LOW DENSITY 3D INAS/GAAS SUBMONOLAYER NANOSTRUCTURES FOR QUANTUM INFORMATION APPLICATIONS
Ronel Christian Roca
37. Novel admittance spectroscopy for evaluating quantum transport parameters in resonant tunneling diodes
Michihiko Suhara
38. HYBRIDIZED OPTICAL ANAPOLES IN VERTICALLY STACKED AlGaAs NANODISK ARRAYS
Mikko Kjellberg
39. Effective suppression of spin relaxation at room temperature in dilute nitride InGaAsN quantum dots
Ayano Morita
40. <111>A-oriented InP nanowire array grown by self-catalyzed vapor-liquid-solid approach towards stacking-fault-free nanowires
Guoqiang Zhang
41. MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs/GaInNAsSb CORE-MULTISHELL NANOWIRES
Takuto Goto
42. MBE Growth of High-Density InAs/InAsSb Nanowires on Si(111) Substrates and Their Mid-Infrared Emission
Koichi Yamaguchi
43. CAVITY OPTOMECHANICS BASED ON EPITAXIAL GAP ON NOMINALLY (001)-ORIENTED SI BY LOW-TEMPERATURE AND SELECTIVE ETCHING
Víctor Jesús Gómez
44. SELECTIVE AREA MOLECULAR BEAM EPITAXY AND STRUCTURAL PROPERTIES OF HIGH QUALITY GaAs/GaNAs CORE-MULTISHELL NANOWIRES
Kaito Nakama
45. SCALING SELECTIVE AREA EPITAXY OF THE EARTH-ABUNDANT PHOTOVOLTAIC MATERIAL Zn3P2
Aidas Urbonavicius
46. IMPROVEMENT OF LUMINESCENCE INTENSITY OF Bi / III-V SEMICONDUCTOR MQW STRUCTURE GROWN ON InP(311)B SUBSTRATE
Masafumi Takioto
47. IMPACT OF THE PRESENCE OF SILICON ON INP CHLORINE BASED PLASMA ETCHING
Andrew Newton
48. SEMICONDUCTOR NANOWIRE HETEROSTROCTURES FOR HOT-CARRIER PHOTOVOLTAICS
Javier Enrique Escobar Alcón
49. Study of the relationship of AlInGaAs solid composition to MOVPE gas phase precursor ratios
Steven Kleijn
50. GROWTH AND CHARACTERIZATIONS OF GaAs/GaNAs CORE-MULTISHELL MULTIPLE QUANTUM WELL NANOWIRES HAVING DIFFERENT PERIODICITY
Ryoga Iida
51. DEGENERATELY DOPED NANO-TREE LIGHT EMITTING DIODES
Kristi Adham
52. GROWTH OPTIMIZATION OF INP-BASED INAS QUANTUM DOTS FOR HIGH-PERFORMANCE 1.55 µm LASER APPLICATIONS
Vikram Khatri
53. Surface study of AlGaAs/GaAs structure after ammonium sulphide (NH4)2S chemical passivation
Sylvain Febvre
54. LIGHT ABSORPTION ENHANCEMENT IN GAAS NANOWIRES EVIDENCED BY PHOTOLUMINESCENCE SPECTROSCOPY
Lutz Geelhaar
55. Strain-driven Dislocation Filtering for Epitaxial Growth of InP on (001) Silicon
Shangfeng Liu
56. UNLEASHING THE POTENTIAL OF SEMICONDUCTOR NANOWIRES AS ADVANCED NANOCATALYST SUPPORTS
Marie Bermeo
57. InAs Quantum Dots with Emission Wavelength of 1.38 µm Grown by Molecular Beam Epitaxy on GaAs Substrates
Wei-Sheng Liu
58. MOLECULAR BEAM EPITAXY OF InAs-on-InP QUANTUM-DASH LASERS FROM O-BAND TO C-BAND
Arnaud Wilk
59. Lasing characteristics of SCH-MQW LD grown on directly bonded InP/Si substrates with gas out channel
Zhao Liang
60. PRODUCING PASSIVATION AND ANTI-REFLECTION (ARC) COATING ON GAAS BY A SIMPLE AND SCALABLE METHOD
Zahra Jahanshah Rad
61. A novel roof-type core-shell quantum well nanorod structure for high efficiency ultraviolet LEDs.
Jeong-Kyun Oh
62. 3D Photonic Crystal Phosphor Films for Efficient Color Conversion in Micro-LED Applications
Taehun Kim
63. INVESTIGATION ON WAVELENGTH, STRAIN, AND BARRIER MATERIALS IN SWIR GASB-BASED SESAMS
Marco Gaulke
64. Grating Coupling Coefficient Reduction of Membrane III-V Lasers on Silicon Using Splitted Surface Grating
Koji Takeda
65. LOW-THRESHOLD HYBRID PHOTONIC CRYSTAL LASER UTILIZING BOUND STATE IN CONTINUUM
Hansol Lee
66. Deep-ultraviolet and Visible Dual-Band Diode for Efficient Optical Wireless Communication Systems
Haiding Sun
67. High-quality GaSb buffer template on Si with multiple AlSb defect filter layers for high-performance SWIR laser diode
Eungbeom Yeon
68. ELECTRON TEMPERTUARE IN DOUBLE QUANTUM WELL CASCADE COOLING STRUCTURES
Xiangyu Zhu
69. High-speed modulation in GaN-based laser diodes
Chao Shen
70. LOW-THRESHOLD SINGLE TERNARY GaAsSb NANOWIRE LASERS EMITTING AT SILICON TRANSPARENT WAVELENGTHS
Cem Doganlar
71. Bidirectional Widely Tuneable 1310 nm MEMS VCSEL
Masoud Payandeh
72. Enhancement of Mid-wavelength infrared detection performance using a metal-metamaterial
Paula Wich-Glasen
73. Fabrication of silicon-integrated telecom-wavelength photonic-crystal surface- emitting lasers using micro-transfer printing
Olof Sjödin
74. Ferroelectric Hf0.5Zr0.5O2 on InAs at Cryogenic Temperatures
Karthik Ram Mamidala
75. EFFICIENT COLOR CONVERSION FROM COLLOIDAL QUANTUM DOTS EMBEDDED IN RESONANT CAVITY
Tae-Yun
1. Ga2O3/GaN HETEROSTRUCTURE FOR DEEP UVC SENSING AND LED APPLICATIONS
Peter Ramvall
2. The epitaxial strain and stress relationships in the alpha and beta phases of (Al,Ga)2O3 and their effects onto phonon and electronic properties
Mathias Schubert
3. HIGH-CRYSTALLINE QUALITY Si-DOPED β-Ga2O3 WITH DIFFERENT SURFACE ORIENTATIONS BY HOTWALL MOCVD
Daniela Gogova
4. HfO2/β-Ga2O3(−201) interface electrical properties after thermal treatment
Karim Cherkaoui
5. High-performance Micro-Size Light-Emitting and Detecting Diodes with Triangular shapes
Huabin Yu
6. 1.5µm SINGLE-PHOTON EMISSION FROM GaSb QUANTUM DOT EXCITED RESONANTLY WITH A SEMICONDUCTOR LASER
Teemu Hakkarainen
7. IMPROVING LIGHT COUPLING IN LWIR T2SL AND QWIP DETECTORS USING METASTRUCTURES: A NUMERIC SIMULATION STUDY
Linnea Bendrot
8. TUNEABLE STRUCTURAL COLORS FROM TiO2 MIE RESONATOR ARRAYS IN GLASS
Mikko Kjellberg
9. Fully coalesced thin GaN growth on AlN substrates for AlN-based HEMTs by hot-wall MOCVD
Minho Kim
10. Thermal transport in AlGaN/GaN HEMTs grown on SiC, GaN, and AlN substrates
Dat Q Tran
11. Fabrication at the speed of light: towards analyte-specific sensors made of diamond using UV laser as energy source
Joana-Catarina Mendes
12. THE ROLE OF GLASS-FRIT BONDING IN ACHIEVING CRACK-FREE GaN-HEMT TRANSFER TO SILICON CARRIER FOR DIAMOND GROWTH
Rizwana Khanum
13. ENHANCED PERFORMANCE OF MULTIWAVELENGTH NANOWIRE LASERS
Mattias Jansson
14. PHOTONIC CRYSTAL SURFACE-EMITTING LASERS FABRICATED BY DEEP-HOLE DRY ETCHING
Myeongeun Kim
15. Selectively Grown Buried InGaAs/InP Quantum Wells on (001) SOI for Lateral Laser Diodes
Donghui Fu
16. New contact approach for optical loss reduction in nano-ridge laser diodes grown on 300 mm silicon wafers
Davide Colucci
17. InP/GaAsSb DHBT Emitter Etching Process Optimization with a Simultaneous fT/fMAX = 451/914 GHz and 86% Device Yield
Mojtaba Ebrahimi Maroufi
18. Terahertz Oscillators Integrated with Multiple Resonant Tunneling Diodes into Cavity Resonator
Feifan Han
19. A 4.7-THz GaAs Schottky barrier diode mixer
Divya Jayasankar
20. Coherent Coupling in a Two-Dimensional Arrayed Resonant-Tunneling-Diode Terahertz Oscillator
Zhenling Tang
21. Development of Rocksalt-structured-MgZnO-based UV-C Lamp Emitting in 190-220 nm Spectral Range
Kotaro Ogawa
22. III-nitride-based photonic crystal surface-emitting lasers with UVC emission
Dogukan Apaydin
23. Diamond growth for power and quantum device applications
Okhyun Nam
24. FIRST GAN DETECTOR ARRAY FOR HIGH ENERGY PROTON BEAM IMAGING
Matilde Siviero
25. Trap Characterization And Microwave Power Performance In Buffer-Free AlGaN/GaN-On-SiC MISHEMTs
Amit Bansal
26. Short-term reliability assessment of sub-micron thick AlN/GaN-on-Silicon HEMTs grown by MBE for RF applications
Elodie Carneiro
27. INTEGRATED AMPLITUDE AND PHASE MODULATOR FOR FREE-SPACE OPTICAL COMMUNICATIONS ESTABLISHED IN THE LWIR ATMOSPHERIC WINDOW
Salvatore Pes
28. Compact light couplers for III-V membrane devices laterally grown on SOI
Zhaojie Ren
29. RIDGE QUANTUM CASCADE DETECTORS FOR FREE-SPACE OPTICAL COMMUNICATIONS ESTABLISHED IN THE LWIR
Nour Nawfal
30. VERTICAL GAN PN DIODE WITH TRIPLE-ZONE EDGE TERMINATION USING STREAMLINED SINGLEIMPLANT PROCESSING
Yu Duan
31. Fully-Vertical GaN-on-SiC Trench MOSFETs
Jialun Li
32. Template-Assisted Selective Epitaxy of InAs on W metal films
Johannes Svensson
33. Growth of GaSb nanowires revealed by environmental TEM
Mikelis Marnauza
34. III-V NANOWIRES WITH LIGHT-ABSORBING/EMITTING PROPERTIES ON A 2-INCHI Si WAFER
Keisuke Minehisa
35. Charge carrier diffusion induced nanowire light-emitting diodes
Yue Zhao
36. High fT and fmax of double δ-doped GaInSb channel HEMTs
Ryosuke Kouno
37. INVESTIGATION OF ATOMIC LAYER ETCHING FOR FABRICATION OF InP HEMTS
Austin Minnich
38. Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT structure
Tomoki Jinnai
39. TiW-based InP DHBT technology for next generation communication systems analog front-end integrated circuits
Virginie Nodjiadjim
40. Type-I and type-II interband cascade lasers emitting below 3 µm
Maëva fagot
41. OPTIMIZATION OF PL- AND LASING-WAVELENGTH DETUNING OF MEMBRANE LASERS FOR UNCOOLED OPERATION
Takuro Fujii
42. Robust Measurement of Nanowire Laser Performance Across 8 Designs using Experimental Big-Data
Stephen Church
43. Investigation of device length dependence of 1.55-µm-band QD-RSOA in threshold current of SiPh-based heterogeneous tunable laser
Taisuke Matsuki
44. BUFFER ENGINEERING OF ALGAN CHANNEL TRANSISTORS ON SILICON GROWN BY MOLECULAR BEAM EPITAXY FOR HIGH VOLTAGE APPLICATIONS
Antoine BARBIER-CUEIL
45. GaN HEMT using partial high-k films at G-D spacing to improve breakdown voltage
Yasuyuki Miyamoto
46. High threshold voltage p-GaN/p-AlGaN/AlGaN/GaN HEMT
Min Gi Jeong
47. CONTROL OF COMPOSITION AND CHANNEL-BARRIER INTERFACE SHARPNESS IN MOCVD GROWN HIGH-Al CONTENT AlGaN/GaN HEMTS
Alexis Papamichail
48. ANNEALING EFFECT ON GaAs AND GaNAs NANOWIRES AT VARIOUS TEMPERATURES
HIDETOSHI HASHIMOTO
49. Visualizing the Vapor-Solid-Solid Growth of Wurtzite GaP Nanowires
Tianyi Hu
50. SINGLE INDIUM PHOSPHIDE NANOWIRE DIODES AS ULTRAHIGH-RESOLUTION DETECTORS FOR IMAGING X-RAY AND OPTICAL FOCI
Nils Lamers
51. STRAINED CORE/DUAL-SHELL NANOWIRES: THE DIFFERENT INTERFACE ROLES AND THEIR IMPORTANCE FOR APPLICATIONS OF GAAS ACROSS NEAR-INFRARED
Xiaoxiao Sun
52. NANOCLUSTERS IN HIGH-MOBILITY ULTRAFAST InGaAs PHOTOCONDUCTORS ON InP
Steffen Breuer
53. INVESTIGATION OF INP-SI INTERFACE BAND STRUCTURE USING DENSITY FUNCTIONAL THEORY
Kyro Odyssefs Kosmatos
54. III-V semiconductor epitaxy based on machine learning and in-situ feedback control
Chao Zhao
55. OPTICALLY ACTIVE InGaAs AXIAL NANOWIRE HETEROSTRUCTURES FOR QUANTUM INTEGRATED PHOTONIC CIRCUITS
Hyowon Jeong
56. Sustainable high efficiency multi-junction nanowire solar cells
Mariia Shcherbakova
57. Monolithically integrated InAs/InGaAs dual-band infrared photodetector
Seungwan Woo
58. DYNAMICS OF HOT CARRIERS IN InGaAs NANOWIRES MONOLITHICALLY GROWN ON SILICON
Hamidreza Esmaielpour
59. Multijunction-type PIN photodetector with pinhole reflection for optical communication applications
Toshimasa Umezawa
60. Optoelectronic Nanowire Neuron
Thomas Kjellberg Jensen
61. Semiconductor-Oxide Interfaces of InAs-based Ferroelectric and Memristive Devices
Austin Irish
62. III-V NANOWIRE BASED NEUROMORPHIC NANOPHOTONIC DEVICES
Vidar Flodgren
63. Activation Energies and Polarization-Dependent Conduction in Ferroelectric InAs-based Capacitors
Hannes Dahlberg
64. MOLECULAR BEAM EPITAXY OF (Al,Sc)N NANOWIRES FOR PIEZOELECTRIC ENERGY HARVESTING
Philipp John
65. TERAHERTZ OPTICAL HALL EFFECT IN AlScN/GaN AND AlYN/GaN HEMT STRUCTURES
Vallery Stanishev
66. Investigation of Noise Performance in InP HEMTs with Varying Indium Channel Composition from 80 K to 300 K
Junjie Li
67. Gate-Controlled Near-Surface Josephson junctions
Louise Olausson
68. Demonstration of vertical resonant tunneling field-effect transistor using InGaAs/GaAs super lattice nanowires
Yoshiki Tai
69. Enhancing III-V Nanowire MOSFET RF Performance through Optimized Gate Resistance
Marcus Sandberg
70. Lattice-matching epitaxy of rutile-type GexSn1−xO2 alloy film on TiO2 substrate for device applications
Hitoshi Takane
71. SOLID-PHASE-EPITAXY OF RUTILE-GeO2 IN MOLECULAR BEAM EPITAXY (MBE)
Wenshan Chen
72. Non-volatilely Reconfigurable Frequency Modulation with a III-V Ferroelectric Transistor
Zhongyunshen Zhu
73. DEVELOPMENT OF AN ITO-BASED FERRO-ELECTRICAL MOSFET
Karl-Magnus Persson
74. SURFACE PROPERTIES OF P-GAN AND INTERACTION WITH NICKEL
Mikko Miettinen
75. Bismuth-trimer adlayer on In- and Sb- terminated InSb(111) surfaces
Rohit Yadav
76. Quasi-ALE process for GaN: High etching rate without compromising the surface roughness
Paula MouriñoMiñambres
77. Evaluating Atomic Layer Etching: Analytical Approaches to Ion Energy Control for semiconductor devices
Oscar Danielsson
78. In-situ OBSERVATION OF InAs/GaAs QUANTUM DOTS USING THE MAGNIFICATION INFERRED CURVATURE METHOD
Jinkwan Kwoen
79. IN-SITU SYNTHESIS OF FexPy NANOPARTICLES
Azemina Kraina
80. Monodisperse InAs QDs investigation through Atom Probe Tomography
Binita Tongbram
82. SCALABLE TOP-DOWN FABRICATION OF (IN,GA)N NANOWIRES FROM EPITAXIAL LAYERS
Lutz Geelhaar
83. OPTICAL INVESTIGATIONS OF NANO-LEDS BASED ON MICRON SIZED III NITRIDE PLATELETS
Anders Gustafsson
84. InGaN platelets for red micro LEDs
Martin Berg