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Plenary Speakers

Igor Aharonovich

University of Technology Sydney, Sydney, Australia
Topic: “Quantum Technologies with Hexagonal Boron Nitride”

Igor Aharonovich is an award-winning scientist working on cuttingedge research into quantum sources that are able to generate, encode and distribute quantum information. A Professor in the School of Mathematical and Physical Sciences at UTS, Igor investigates optically active defects in solids, with the aim of identifying a new generation of ultra-bright solid state quantum emitters.

Maki Kushimoto

Nagoya University, Nagoya, Japan
Topic: “Deep Ultraviolet Edge-Emitting Lasers: Progress and Prospects”

Dr. Maki Kushimoto received her Ph.D. in 2016 from the Department of Electronics and Information Systems, Graduate School of Engineering, Nagoya University. She specializes in crystal growth, optical characterization, and device development of nitride semiconductors, with a particular focus on deep-ultraviolet (DUV) light-emitting devices. Her notable achievements include the first demonstration of room-temperature continuous-wave lasing in AlGaN-based DUV laser diodes, which has significantly advanced the field. Currently, she is working on improving the performance of DUV semiconductor lasers for applications such as sterilization, sensing, and laser processing. She has served as an Assistant Professor from 2016, a Lecturer from 2022, and is currently an Associate Professor at the same institution since September 2024.

Michał Boćkowski
Institute of High-Pressure Physics of the Polish Academy of Sciences, Warsaw, Poland
Topic: “Cracking the Code of GaN Crystal Growth: Advances, Challenges and the Road Ahead”

Michał Boćkowski earned his M.Sc. Eng. in Solid State Physics from Warsaw University of Technology (1989), Ph.D. from University of Montpellier II (1995), and D.Sc. from the Institute of Physics, Polish Academy of Sciences (IP PAS) (2013). He was awarded the title of Professor by the President of Poland in 2021. Since 1989, he has been with the Institute of High Pressure Physics, Polish Academy of Sciences (IHPP PAS), and is currently the Chief Director. He is also a professor at Nagoya University’s CIRFE within IMaSS and an International Fellow of the Japan Society of Applied Physics (JSAP). Boćkowski ranks in the top 2% of researchers and has led numerous international projects. His main research interests are nitride semiconductors, material processing, and crystal growth.

Tetsuya Takeuchi, Meijo University, Nagoya, Japan
Topic “Developments and Prospects of GaN-based VCSELs”.

Tomás Palacios
Massachusetts Institute of Technology, Boston, USA
Topic: “III-Nitride Electronics for the AI Revolution”

Tomás Palacios is the Clarence J. LeBel Professor of Electrical Engineering, and the director of the Microsystems Technology Laboratories (MTL) at MIT. He received his PhD from the University of California - Santa Barbara in 2006, and his undergraduate degree in Telecommunication Engineering from the Polytechnical University of Madrid, Spain, in 2001.  His work on novel semiconductor devices has been recognized with multiple awards including the Presidential Early Career Award for Scientists and Engineers, the 2012 and 2019 IEEE George Smith Award, and the NSF, ONR, and DARPA Young Faculty Awards, among many others. Prof. Palacios has authored over 500 contributions in international journals and conferences, and he is a Fellow of IEEE.

Ulrich Steegmüller
ams OSRAM, Regensburg, Germany
Topic: "Nitride micro-LEDs for Digital Light"

Dr. Ulrich Steegmueller is the Senior Vice President R&D and CTO of Opto Semiconductors, a business unit of ams OSRAM, and leading manufacturer of opto-electronic components to serve automotive, industrial and consumer industries. He has over 25 years of extensive technical and leadership experience in LED and Laser technology and product development. Previously he served as Senior Director for the Microsoft Quantum Computing program, and as Chief Development Officer for Aledia, a Micro-LED Startup. He received his Ph.D in Physical Chemistry from University Göttingen in 1997, and his Diploma in Physics from University Stuttgart in 1993.

Xinqiuang Wang
Peking University, Beijing, China
Topic: "Epitaxy of transferrable III-nitrides on two-dimensional materials”

Dr. Xinqiang Wang is a Professor at School of Physics and State Key Laboratory of Artificial Microstructure and Mesoscopic Physics at Peking University, specializing in condensed matter physics and semiconductor materials and devices. His research focuses on the development of III-nitride-based semiconductor materials and devices, including the epitaxial growth of III-nitride materials and quantum structures, ultraviolet and visible light-emitting diodes (LEDs) and micro-LEDs, as well as novel ferroelectric devices. He has published over 300 peer-reviewed articles, holds several patents, and has received numerous awards in China for his contributions to the field.

Zlatko Sitar, NC State University, Raleigh, USA