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Topic I: Growth
Bulk crystal growth, III-nitride epitaxy, doping and point defects, nitride alloys, and heterostructures as well as growth methods and growth technologies, microstructures, nanostructures, theory, novel materials such as B and Sc containing III-nitrides, 2D materials, quaternary InAlGaN, etc.
Program Chair: Izabella Grzegory
Topic II: Characterization
Optical and electronic properties of III-nitrides, including novel materials, structural analysis, defect characterization, nanophotonics, nanoelectronics, crystal band structures, electronic states of defects, theory and simulation.
Program Chair: Filip Tuomisto
Topic III: Optical devices
Nitride based light emitters such as micro-LEDs, edge emitting laser diodes, VCSELs, multi-section laser diodes, UV-LEDs, UV-laser diodes, single photon emitters, tunnel-junction LEDs, photo-detectors, photovoltaics, nanophotonic physics and devices, frequency combs, non-linear optics, intersubband emitters, sensors, device technologies and simulations.
Program Chair: Åsa Haglund
Topic IV: Electronic devices
Transistors, diodes, switches, amplifiers, power and RF applications, actuators, acoustic devices, device processing, transport and switching properties, contacts and reliability, device concepts and simulations.
Program Chair: Oliver Ambacher